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| Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.026 @ VGS = -4.5 V -12 0.035 @ VGS = -2.5 V 0.046 @ VGS = -1.8 V D TrenchFETr Power MOSFETS ID (A) -5.1 -4.5 -3.9 APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6911DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 -5.1 Steady State Unit V -4.3 -3.5 -30 A -0.7 0.83 0.53 -55 to 150 W _C ID IDM IS PD TJ, Tstg -4.1 -1.0 1.14 0.73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72231 S-31064--Rev. A, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 86 124 59 Maximum 110 150 75 Unit _C/W C/W 1 Si6911DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -300 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -5.1 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -4.5 A VGS = -1.8 V, ID = -3.9 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -5.1 A IS = -1.0 A, VGS = 0 V -20 0.021 0.028 0.037 20 -0.65 -1.1 0.026 0.035 0.046 W W S V -0.4 -0.9 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.0 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -6 V, VGS = -4.5 V, ID = -5.1 A 16 1.9 3.9 35 62 120 70 65 55 100 180 110 100 ns 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 2V 18 24 30 TC = -55_C 25_C Transfer Characteristics 18 125_C 12 12 6 1.5 V 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72231 S-31064--Rev. A, 26-May-03 2 Si6911DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.08 2000 Ciss 1500 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 1000 Coss 500 0.02 VGS = 4.5 V 0.00 0 6 12 18 24 30 Crss 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 5.1 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.1 A 1.4 4 r DS(on) - On-Resistance ( W) (Normalized) 8 12 16 20 5 1.2 3 1.0 2 1 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 TJ = 150_C 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 5.1 A 1 TJ = 25_C 0.04 0.02 0.2 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72231 S-31064--Rev. A, 26-May-03 www.vishay.com 3 Si6911DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 160 ID = 300 mA 0.2 Power (W) 120 0.1 80 0.0 40 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 10 I D - Drain Current (A) Limited by rDS(on) 1 ms 10 ms 1 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 124_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72231 S-31064--Rev. A, 26-May-03 Si6911DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72231 S-31064--Rev. A, 26-May-03 www.vishay.com 5 |
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